硅(Si)功率元件虽然价格便宜,但性能方面的上升潜力比以前要小了。其中,在600V以上耐压下使用的IGBT,其性能的改善和提高量产性开始遭遇极限。在性能方面逐渐触顶的方面是如何降低导通电阻和提高电流密度。量产性方面,也难以采用直径超过8英寸的硅基板。 Silicon (Si) power components, although inexpensive, have the potential for higher performance than previously. Among them, the use of IGBT above 600V withstand voltage, the improvement of its performance and increase mass production began to encounter the limit. How to reduce the on-resistance and increase the current density in the aspect of the gradual peak in performance. In terms of mass production, it is also difficult to use a silicon substrate with a diameter of more than 8 inches.