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研究了 p型含氮以及不含氮直拉 (CZ)硅中热施主 (TD)以及氮氧 (N- O)复合体的电学性质 .硅片在 35 0～85 0℃范围进行不同时间的退火后 ,利用四探针和通过室温傅里叶红外光谱 (FTIR)分别测量其载流子浓度和间隙氧浓度的变化 .实验结果表明 :p型含氮直拉硅 (NCZ)中热施主的电学特性基本与 n型 NCZ硅相同 ,但 N- O复合体的消除温度明显低于 n型 NCZ硅 ,这是由于 p型 NCZ硅中硼促进了 N- O复合体的消除
The electrical properties of the thermal donor (TD) and the oxynitride (N-O) complexes in p-type and non-nitrogen-containing Cz silicon were investigated. The silicon wafers were aged at 35 0 ~ 85 0 ℃ for different time After annealing, the changes of carrier concentration and interstitial oxygen concentration were measured by four probes and by room temperature Fourier transform infrared spectroscopy (FTIR) .The experimental results show that the thermal donor in p-type nitrogen-containing Czochralski The electrical properties are essentially the same as those of n-type NCZ silicon, but the elimination temperature of the N-O complex is significantly lower than that of n-type NCZ silicon due to the boron-promoted elimination of the N-O complex in p-type NCZ silicon