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讨论了用于深亚微米半导体器件模拟的Ｍｏｎｔｅ Ｃａｒｌｏ 方法（ＭＣＭ），探讨了确定自由飞行时间的自散射方法，并简要阐述了玻耳兹曼模型（ＢＴＭ）、漂移扩散模型（ＤＤＭ）和流体动力学模型（ＨＤＭ）之间的关系。
The Monte Carlo method (MCM) for simulation of deep sub-micron semiconductor devices is discussed. The self-scattering method to determine the free-flight time is discussed. The Boltzmann model (BTM), drift diffusion model Relationship between kinetic models (HDM).