Amorphous La0.7Zn0.3MnO3 (LZMO) films were deposited on p+-Si substrates by sol-gel method at low temperature of 450℃. The Ag/LZMO/p+-Si device exhibits invertible bipolar resistive switching and theRHRS/RLRS was about 104-106 at room temperature which can be kept over 103 switching cycles. Better endurance characteristics were observed in the Ag/LZMO/p+-Si device, theVSet and theVReset almost remained after 103 endurance switching cycles. According to electrical analyses, the conductor mechanism was in low resistor state (LRS) governed by the iflament conductor and in the high state (HRS) dominated by the traps-controlled space-charge-limited current (SCLC) conductor.