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采用溶胶-凝胶(sol-gel)工艺在Pt/TiO2/SiO2/p-Si(100)衬底上制备出Bi4Ti3O12(BIT)和Bi3.25La0.75Ti2.97V0.03O12(BLTV)铁电薄膜,研究了La,V共掺杂对BIT薄膜的晶体结构和电学性能的影响.BIT薄膜为c轴择优取向,BLTV薄膜为随机取向,拉曼光谱分析表明V掺杂降低了TiO6(或VO6)八面体的对称性,也增强了Ti—O键(或V—O键)杂化.BLTV薄膜的剩余极化Pr为25.4μC/cm2,远大于BIT薄膜的9.2μC/cm2,表现出良好的铁电性能.疲劳、漏电流测试显示BLTV薄膜具有优良的抗疲劳特性和漏电流特性,表明La,V共掺杂能有效地降低薄膜中的氧空位.
Bi4Ti3O12 (BIT) and Bi3.25La0.75Ti2.97V0.03O12 (BLTV) ferroelectric thin films were prepared on Pt / TiO2 / SiO2 / p-Si (100) substrates by the sol-gel process. The effects of La and V co-doping on the crystal structure and electrical properties of BIT thin films were investigated. The BIT thin films are the preferred c-axis orientation and the BLTV thin films are randomly oriented. The Raman spectra show that V doping reduces the TiO 6 (or VO 6) The symmetry of the surface also enhances the hybridization of Ti-O bonds (or V-O bonds). The remanent polarization Pr of the BLTV film is 25.4 μC / cm2, which is much larger than 9.2 μC / cm2 of the BIT film and shows good iron Electrical and Mechanical Properties Fatigue and leakage current tests show that the BLTV film has excellent anti-fatigue and leakage current characteristics, indicating that La and V co-doping can effectively reduce the oxygen vacancies in the film.