,Analytical capacitance model for 14 nm FinFET considering dual-k spacer

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The conformal mapping of an electric field has been employed to develop an accurate parasitic capacitance model for nanoscale fin field-effect transistor (FinFET) device.Firstly,the structure of the dual-layer spacers and the gate parasitic capacitors are thoroughly analyzed.Then,the Cartesian coordinate is transferred into the elliptic coordinate and the equivalent fringe capacitance model can be built-up by some arithmetical operations.In order to validate our proposed model,the comparison of statistical analysis between the proposed calculation and the 3D-TCAD simulation has been carried out,and several different material combinations of the dual-k structure have been considered.The results show that the proposed analytical model can accurately calculate the fringe capacitance of the FinFET device with dual-k spacers.
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