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The Ni/4H-SiC Schottky barrier diodes (SBDs) and transfer length method (TLM) test patterns of Ni/4H-SiC Ohmic contacts were fabricated,and irradiated with 1 MeV electrons up to a dose of 3.43×10 14 e/cm 2.After radiation,the forward currents of the SBDs at 2 V decreased by about 50%,and the reverse currents at 200 V increased by less than 30%.Schottky barrier height (φ B) of the Ni/4H-SiC SBD increased from 1.20 eV to 1.21 eV under 0 V irradiation bias,and decreased from 1.25 eV to 1.19 eV under 30 V irradiation bias.The degradation of φ B could be explained by the variation of interface states of Schottky contacts.The on-state resistance (R s) and the reverse current increased with the dose,which can be ascribed to the radiation defects in bulk material.The specific contact resistance (ρ c) of the Ni/SiC Ohmic contact increased from 5.11×10 5 · cm 2 to 2.97×10 4 · cm 2.
The Ni / 4H-SiC Schottky barrier diodes (SBDs) and transfer length method (TLM) test patterns of Ni / 4H-SiC Ohmic contacts were fabricated, and irradiated with 1 MeV electrons up to a dose of 3.43 × 10 14 e / cm 2.After radiation, the forward currents of the SBDs at 2 V decreased by about 50%, and the reverse currents at 200 V increased by less than 30%. Schottky barrier height (φ B) of the Ni / 4H-SiC SBD increased from 1.20 eV to 1.21 eV under 0 V irradiation bias, and decreased from 1.25 eV to 1.19 eV under 30 V irradiation bias. The degradation of φ B could be explained by the variation of interface states of Schottky contacts. on-state resistance ( R s) and the reverse current increased with the dose, which can be ascribed to the radiation defects in bulk material. The specific contact resistance (pc) of the Ni / SiC Ohmic contact increased from 5.11 × 10 5 · cm 2 to 2.97 × 10 4 · cm 2.