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为满足电压源换流器高压直流输电(voltage source converter high voltage direct current,VSC-HVDC)装置可靠性及其试验方法和试验等效机制研究的需要,重点研究了该装置中绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)阀在过电流故障状态下的失效机制。介绍了VSC-HVDC系统及其阀的结构,将IGBT阀过电流故障分为3种不同的类型,分析IGBT阀在不同过电流故障状态下的电压和电流应力及其在故障应力下的内部物理过程。最终得到了IGBT阀在3种过电流故障下的失效机制。
In order to meet the needs of the research on the reliability of VSC-HVDC devices and the research on the equivalent mechanisms of VSC-HVDC devices, the insulation gate bipolar Failure mechanism of insulated gate bipolar transistor (IGBT) valve in overcurrent fault condition. The structure of VSC-HVDC system and its valve are introduced. The over-current faults of IGBT valve are divided into three different types. The voltage and current stress of IGBT valve under different over-current fault conditions and their internal physical process. In the end, the failure mechanism of IGBT valve under three overcurrent faults was obtained.