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利用轴对称PIC模型对轴承滚珠等离子体浸没离子注入(PIII)过程进行了数值模拟,对归一化电势的扩展情况进行了研究。在滚珠批量处理过程中,为了避免相邻滚珠周围鞘层的相互重叠对注入均匀性造成不良影响,对滚珠在靶台上摆放的最小距离进行了数值计算,计算结果表明:在电压为-40kV,氮等离子体密度为4.8×109cm-3,脉冲宽度为10μs时,滚珠摆放的最小距离应大于34.18cm。分析了滚珠圆周方向注入剂量的分布情况,针对静止滚珠改性处理后剂量分布很不均匀的问题,通过旋转靶台使滚珠注入均匀性明显得到改善。利用朗谬尔探针测量了滚珠周围鞘层扩展的情况测量,模拟结果和实验测量结果相吻合,最大相对误差小于8.4%。
Axisymmetric PIC model was used to simulate the process of ball-bearing plasma immersion ion implantation (PIII), and the normalized potential expansion was studied. In the course of ball batch processing, in order to avoid the adverse influence of the overlap of adjacent sheaths on the uniformity of injection, the minimum distance of balls placed on the target is calculated. The calculation results show that when the voltage is - 40kV, nitrogen plasma density of 4.8 × 109cm-3, the pulse width of 10μs, the ball placed the minimum distance should be greater than 34.18cm. The distribution of the injected dose in the circumferential direction of the ball was analyzed. In view of the problem of uneven distribution of the dose after the static ball was modified, the ball injection uniformity was significantly improved by rotating the target. The Langmuir probe was used to measure the sheath expansion around the ball. The simulation results agree well with the experimental results. The maximum relative error is less than 8.4%.