本文介绍x值分别为20％,30％,43％的碲镉汞外延层的电特性。研究的温度范围从4.2～300K。这些样品是按着“密闭空间蒸气输运”技术生长的。它们具有一称作“台面”的均匀区域,其外延厚度远超过本来的淀积厚度。改变退火条件,如改变退火时间和汞压时,电特性就有所变化,R_H、ρ、μ_H的曲线随厚度变化。研究用的所有外延层都是n型。 This article describes the electrical properties of HgCdTe epitaxial layers with x values ​​of 20%, 30%, and 43%, respectively. The study temperature ranged from 4.2 to 300K. These samples were grown in a “closed-space vapor transport” technique. They have a uniform area called the “mesa” whose epitaxial thickness far exceeds its original deposition thickness. Change the annealing conditions, such as changing the annealing time and mercury pressure, the electrical properties will change, R_H, ρ, μ_H curve with the thickness changes. All the epitaxial layers studied are n-type.