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采用复合高功率脉冲磁控溅射技术在单晶Si片、高速钢和玻璃上制备CrN薄膜。分别研究了脉冲电压在500,600,700,750 V时对薄膜的组织结构和力学性能的影响。结果表明,随着脉冲电压的增加,靶材离化率增加,靶电流以及溅射原子离子数量级能量均增大,使得沉积的薄膜组织结构更加致密,晶粒逐渐细化,表面更加光滑,硬度提高。高功率脉冲磁控溅射技术具备了磁控溅射技术制备的薄膜表面光滑优势,以及电弧离子镀高离化率特点,获得了结构性能优异的CrN薄膜。
CrN thin films were prepared on single-crystal Si wafers, high-speed steels and glass by composite high-power pulsed magnetron sputtering. The effects of pulse voltage at 500, 600, 700 and 750 V on the microstructure and mechanical properties of the films were investigated. The results show that with the increase of pulse voltage, the target ionization rate increases, the target current and the atomic energy of sputter ions increase, which makes the deposited film structure more dense, the grain refinement gradually, the surface more smooth, the hardness improve. High-power pulsed magnetron sputtering technology has the advantages of smooth surface of the film prepared by magnetron sputtering technology and high ionization rate of arc ion plating, and obtained CrN film with excellent structural performance.