论文部分内容阅读
随着半导体技术的不断发展 ,MOSFET (metal oxide semiconductorfieldeffecttransistor)的特征尺寸不断缩小 ,栅介质等效氧化物厚度已小至nm数量级。这时电子的直接隧穿效应将非常显著 ,将严重影响器件的稳定性和可靠性。因此需要寻找新型高k介质材料 ,能够在保持和增大栅极电容的同时 ,使介质层仍保持足够的物理厚度来限制隧穿效应的影响。本文综述了研究高k栅介质材料的意义 ;MOS栅介质的要求 ;主要新型高k栅介质材料的最新研究动态 ;展望了高k介质材料今后发展的主要趋势和需要解决的问题
With the continuous development of semiconductor technology, MOSFET (metal oxide semiconductor field effect transistor) feature size continues to shrink, the gate dielectric equivalent oxide thickness has been as small as nm order of magnitude. At this time, the direct tunneling effect of electrons will be very significant, which will seriously affect the stability and reliability of the device. Therefore, it is necessary to find a new high-k dielectric material that can maintain the gate capacitance while maintaining the dielectric layer sufficient physical thickness to limit the tunneling effect. This paper reviews the significance of researching high-k gate dielectric materials, the requirements of MOS gate dielectric, the latest research trends of new high-k gate dielectric materials, and the future trends of high-k dielectric materials and the problems to be solved