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使用Ⅲ-Ⅴ族化合物半导体光电阴极的光电成像器件在光纤通讯、医学、夜视以及其它科研领域有着广泛的用途。其核心部件是二元、三元或四元化合物半导体材料光电阴极。国外在对阈波长为0.9μm的GaAs负电
Photoelectric imaging devices using group III-V compound semiconductor photocathodes have found wide applications in the fields of optical fiber communication, medicine, night vision, and other fields of research. Its core components are binary, ternary or quaternary compound semiconductor material photocathode. Abroad in the threshold wavelength of 0.9μm GaAs negatively charged