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设计了一个三管有源像素和其用开关电容放大器实现的双采样读出电路.该电路被嵌入一64×64像素阵列CMOS图像传感器,在Chartered公司0.35μm工艺线上成功流片.在8μm×8μm像素尺寸下实现了57%的填充因子.测得可见光响应灵敏度为0.8V/(lux.s),动态范围为50dB.理论分析和实验结果表明随着工艺尺寸缩小,像素尺寸减小会使光响应灵敏度降低.在深亚微米工艺条件下,较深的n阱/p衬底结光电二极管可以提供合理的填充因子和光响应灵敏度.
A three-transistor active pixel and its double-sampling readout circuit using a switched capacitor amplifier are designed.The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and is successfully run on a 0.35μm process line from Chartered Corp. At 8μm 57% fill factor was achieved at × 8μm pixel size.The visible light response was measured to be 0.8V / (lux.s) and the dynamic range was 50dB.The theoretical analysis and experimental results show that as the process size decreases, the pixel size decreases Lower photoresponse sensitivity and deep n-well / p-substrate photodiodes provide reasonable fill factor and photoresponse sensitivity under deep submicron processing conditions.