【摘 要】
：
Gallium oxide (Ga2O3) thin films were deposited on a-Al2O3 (11(ˉ2)0) substrates by pulsed laser deposition (PLD) with different oxygen pressures at 650 ℃. By
【机 构】
：
College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Material
论文部分内容阅读
Gallium oxide (Ga2O3) thin films were deposited on a-Al2O3 (11(ˉ2)0) substrates by pulsed laser deposition (PLD) with different oxygen pressures at 650 ℃. By reducing the oxygen pressure, mixed-phase Ga2O3 films with α and β phases can be obtained, and on the basis of this, mixed-phase Ga2O3 thin film solar-blind photodetectors (SBPDs) were prepared. Comparing the responsivities of the mixed-phase Ga2O3 SBPDs and the single β-Ga2O3 SBPDs at a bias voltage of 25 V, it is found that the former has a maximum responsivity of approximately 12 A/W, which is approximately two orders of magnitude larger than that of the latter. This result shows that the mixed-phase structure of Ga2O3 thin films can be used to prepare high-responsivity SBPDs. Moreover, the cause of this phenomenon was investigated, which will provide a feasible way to improve the responsivity of Ga2O3 thin film SBPDs.
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