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本文介绍了硅烷低压外延的实验装置。用两探针扩展电阻法测量了外延层的杂质分布。结果表明,与硅烷常压外延和四氯化硅常压外延相比,硅烷低压外延的杂质分布更为陡峭。
This article describes the silane low pressure epitaxial experimental device. The impurity distribution of the epitaxial layer was measured by two-probe extended resistance method. The results show that the distribution of impurities in silane epitaxy is steeper than that of atmospheric pressure epitaxy and silicon tetrachloride.