论文部分内容阅读
采用射频磁控溅射的方法制备了TiO2/ZnO复合薄膜,用XRD、SEM和UV-Vis分别表征TiO2/ZnO薄膜的晶体结构、表面形貌及其紫外-可见光吸收谱。并用此材料制备了Au/TiO2/ZnO/Au结构MSM光电导型薄膜紫外光探测器,研究其光电特性。实验结果表明,TiO2/ZnO紫外探测器在5 V偏压360 nm紫外光照下光电流约为500μA,其响应度为100 A/W,平均暗电流约为0.5μA;由于TiO2/ZnO复合薄膜之间的费米能级不同而形成的内建电场作用,减少了产生的光生电子与空穴的复合,得到较强的光电流,且其光响应的上升弛豫时间约为22 s,下降响应时间约为80 s;响应时间较长是由于广泛分布于薄膜中的缺陷而造成的。结果表明TiO2/ZnO可作为一种良好的紫外探测材料。
TiO2 / ZnO composite films were prepared by RF magnetron sputtering. The crystal structure, surface morphology and UV-Vis absorption spectra of TiO2 / ZnO films were characterized by XRD, SEM and UV-Vis respectively. The MSM photoconductive thin film UV detector with Au / TiO2 / ZnO / Au structure was prepared by using this material, and its photoelectric properties were studied. The experimental results show that the photocurrent of TiO2 / ZnO UV detector is about 500μA under the bias voltage of 5 V and at 360 nm. The responsivity is 100 A / W and the average dark current is about 0.5μA. Since TiO2 / ZnO composite films And the built-in electric field formed by different Fermi levels can reduce the recombination of photogenerated electrons and holes to obtain a strong photocurrent, and the rise time of the photo-response relaxation time is about 22 s, and the response to the fall The time is about 80 s; the longer response time is due to the flaws that are widely distributed in the film. The results show that TiO2 / ZnO can be used as a good UV detection material.