论文部分内容阅读
为了研究器件参数对GeSiMOSFET器件性能的影响 ,本文在建立一个简单的GeSiMOSFET的器件模型的基础上 ,对GeSiMOSFET的纵向结构进行了系统的理论分析 .确定了纵向结构的CAP层厚度、沟道层载流子面密度、DELTA掺杂浓度以及量子阱阱深之间的关系 ,得出了阈值电压与DELTA掺杂浓度、栅氧化层厚度及CAP层厚度之间的关系 ,还得出了栅压与沟道载流子面密度、栅氧化层厚度及CAP层厚度之间的关系 .并且在此基础上得出了一些有意义的结果 .为了更细致、精确地进行分析 ,我们分别对GeSiPMOSFET和GeSiNMOSFET在MEDICI上做了模拟 .
In order to study the effect of device parameters on the performance of GeSiMOSFET devices, a vertical GeSiMOSFET structure is systematically and theoretically analyzed on the basis of building a simple device model of GeSiMOSFET.The thickness of CAP layer in vertical structure, The relationship between the threshold voltage and the doping concentration of DELTA, the thickness of the gate oxide layer and the thickness of the CAP layer, the relationship between the gate voltage and the thickness of the CAP layer is also obtained. Channel carrier density, gate oxide thickness and CAP layer thickness, and based on this, some meaningful results have been obtained.For a more detailed and accurate analysis, we respectively GeSiPMOSFET and GeSiNMOSFET On MEDICI simulation.