论文部分内容阅读
本文应用优化工艺条件的电共沉积方法 ,制备发射光近于 1.3～ 1.5μm波长的InGaAs薄膜 .用能谱分析仪进行薄膜成分分析 ;分光光度计和单色仪测量薄膜的透射率 ,同时也测量了薄膜的V I特性、导电类型及其表面形貌 .
In this paper, the electro-deposition method with optimized process conditions was used to prepare InGaAs thin films with wavelengths near 1.3-1.5μm.The thin film composition was analyzed by energy spectrum analyzer.The transmittance of thin films was measured by spectrophotometer and monochromator, The VI characteristics, conductivity and surface morphology of the films were measured.