桑他亚国家实验室研究人员研究出一种称为“单项毛病成象”技术,能精确测定由离子辐射引起集成电路的毛病。直到目前,都是采用传统的整个芯片辐射测试法鉴定有故障电路元件,然而,这种方法是根据测量值来推测,计算复杂, Researchers at Sangria National Laboratory have developed a technique called “single-defect imaging” that accurately measures the problems of integrated circuits caused by ionizing radiation. Up to now, the traditional circuit chip radiation test method has been used to identify faulty circuit components. However, this method is based on measured values ​​to infer that the calculation is complicated,