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采用真空气相沉积法在玻璃和单晶硅衬底[111]上制备纳米SnO2及稀土金属钕掺杂薄膜,并对薄膜进行热处理。对薄膜进行XRD、SEM测试。实验显示,不同衬底制备SnO2薄膜在未掺钕时结构有明显区别,采用同样工艺条件在玻璃衬底上制备的SnO2薄膜没有显示择优生长;在硅衬底上制备未掺钕SnO2薄膜显示出沿[101]晶向择优生长趋势。掺钕(5 at%)玻璃衬底制备的薄膜沿[110]衍射峰较强,但薄膜基本呈现自由生长;掺钕后硅衬底制备的薄膜则强烈沿[110]晶向择优生长,随掺钕含量增加择优生长趋势消失,当掺钕含量为(5 at%)时薄膜呈自由生长结构较完善。SEM给出在玻璃基片生长的薄膜表面形貌呈均匀小颗粒状,平均晶粒尺寸在30 nm左右。硅基片制备的薄膜表面则呈紧密均匀带孔颗粒状;颗粒尺寸约1000 nm与计算值相差较大。两种衬底制备的SnO2薄膜经稀土钕掺杂可抑制晶粒生长。本实验中钕掺杂量为5 at%(热处理T=500℃,t=45 m in)时薄膜结构特性最佳。
Preparation of nano-SnO2 and rare earth neodymium doped thin films on glass and monocrystalline silicon substrates [111] by vacuum vapor deposition, and the films were heat-treated. The films were subjected to XRD and SEM tests. The experimental results show that the SnO2 thin films prepared by different substrates have obvious difference in the structure without Nd addition, and the SnO2 thin films prepared on the glass substrates under the same process conditions do not show the preferred growth. Preferential growth along the [101] crystal growth trend. The films prepared by neodymium (5 at%) glass substrate have strong diffraction peaks along [110], but the films show almost free growth. The films prepared by neodymium-doped silicon substrate are strongly preferentially grown along [110] With the increase of neodymium content, the preferred growth trend disappears. When the content of neodymium is 5 at%, the film grows freely. SEM shows that the morphology of the film grown on the glass substrate is uniform and small particle size, the average grain size is about 30 nm. The surface of the film prepared by the silicon substrate was closely and uniformly foraminous particles. The particle size of about 1000 nm was different from the calculated value. SnO2 thin films prepared by two kinds of substrate doped with rare earth can inhibit grain growth. In this experiment, the doping amount of Nd was 5 at% (heat treatment T = 500 ℃, t = 45 min), the best structural properties of the film.