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本文分析了晶体管延迟注入渡越时间器件的工作原理。除在收集结与基区之间插入了一个v型或π型渡越区外,器件的结构与通常晶体管的很相似,但它是作为两端器件运用的。本文用小信号理论计算了其负阻和噪声性能,并进行了大信号性能的近似分析。结果表明:在X波段,该器件能以相当高的效率给出瓦级输出功率,其噪声量度却比一般崩越器件小,约为20dB左右。
This article analyzes the transistor delay injection transit time device works. In addition to inserting a v- or π-type transition between the collector and base, the structure of the device is very similar to that of a typical transistor, but it is used as a two-terminal device. In this paper, the negative resistance and noise performance are calculated by small signal theory, and the approximate analysis of large signal performance is carried out. The results show that in the X-band, the device can give watt-level output power with a very high efficiency, and the noise measurement is smaller than that of ordinary devices, about 20dB.