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中波红外宽带通滤光膜通常膜系层数多,膜层总厚度非常大(厚度达到10μm左右),膜层的镀制工艺难度较大。通过分析红外带通滤光片几种设计方法的特点,并结合实际镀制工艺技术,采用了长波通与短波通及非规整薄膜设计技术相结合的方法,设计了以锗材料为基底的中波3μm～5μm宽带通滤光膜。该设计大幅度降低了膜层的总厚度(约为8.65μm),缩短了膜层的镀制周期,提高了膜层的牢固度;在膜层的镀制工艺过程中,通过改变薄膜材料的蒸发速率、修正蒸发硫化锌材料时电子枪的扫描方式、调整蒸发材料在坩埚中的装载方法,使膜层获得了优异的光谱性能,其通带平均透过率大于96%,截止区域的平均透过率小于1%。
Medium wave infrared broadband bandpass filter film usually layer, the total thickness of the film is very large (thickness of 10μm or so), the film plating process more difficult. By analyzing the characteristics of several design methods of infrared band-pass filter and combining the actual plating technology, the long wave-pass and short-wave-pass and non-regular film design techniques are combined to design the Wave 3μm ~ 5μm wide band pass filter. The design greatly reduces the total thickness of the film (about 8.65μm), shortens the plating cycle of the film and improves the firmness of the film. During the plating process of the film, Evaporation rate, the correction of evaporation of zinc sulfide material electron gun scanning mode, adjusting the evaporation material in the crucible loading method, the film obtained excellent spectral performance, the average transmittance of the passband is greater than 96%, the cut-off area of the average through Over the rate of less than 1%.