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标题的过程包括将H_2O_2与含有一种被吸附的螯合剂的阴离子交换树脂接触。这一方法可用于去除金属离子。高纯H_2O_2尤其适用于Si晶片的清洗剂。例如,用250mL0.3N的Na_4EDTA溶液处理50ml氯型Amberlite IRA-900(带季铵盐阴离子的苯乙烯—二乙烯苯共聚物)阴离子交换树脂,在2小时内
The process of heading includes contacting H 2 O 2 with an anion exchange resin containing an adsorbed chelating agent. This method can be used to remove metal ions. High purity H_2O_2 is especially suitable for Si wafer cleaning agent. For example, 50 ml of a chlorine type Amberlite IRA-900 (quaternary ammonium salt anionic styrene-divinylbenzene copolymer) anion exchange resin was treated with 250 mL of a 0.3N solution of Na 4EDTA and within 2 hours