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位于SiO_2/SiC界面处密度较高的陷阱,不仅俘获SiC MOSFET沟道中的载流子,而且对沟道中的载流子形成散射、降低载流子的迁移率,因而严重影响了SiC MOSFET的开关特性。目前商业化的半导体器件仿真软件中迁移率模型是基于Si器件开发,不能体现SiO_2/SiC界面处的陷阱对沟道中载流子的散射作用。通过引入能正确反映界面陷阱对载流子作用的迁移率模型,利用半导体器件仿真软件研究了界面陷阱对SiC MOSFET动态特性的影响。结果表明,随着界面陷阱密度的增加,SiC MOSFET开通过程变慢,开通损耗增加,而关断过程加快,关断损耗减小;但是由于沟道载流子数量的减少、导通电阻的增加,总损耗是随着界面陷阱密度的增加而增加。
The higher density trap at the SiO 2 / SiC interface not only captures carriers in the SiC MOSFET channel but also scatters carriers in the channel to reduce carrier mobility and thus severely affects the switching of the SiC MOSFET characteristic. At present, the mobility model of the commercially available semiconductor device simulation software is based on the development of Si devices, and can not reflect the scattering of carriers in the channel due to the trap at the SiO 2 / SiC interface. The influence of interface traps on the dynamic characteristics of SiC MOSFETs is investigated by introducing a mobility model that correctly reflects the interface traps on charge carriers. The results show that as the interfacial trapping density increases, the SiC MOSFET turn-on process becomes slow, the turn-on loss increases, the turn-off process increases and the turn-off loss decreases. However, due to the decrease of the channel carrier number, , The total loss increases with the trap density of the interface.