根据Moore定律,微处理器的能力可以按指数方式快速提高,数据存储能力的提高也以相似的方式增长,所以这已经成为进一步提高光刻技术的关键点.尖端光刻技术已经允许器件的特征长度可以比用来制作它们的光波波长还要短.例如,相干效应可被用于具有超紫外光线特性的50nm模式上[1].但是想要继续在成本与效益方面有所改善,可能性很小,所以Moore定律与光刻技术将会不可避免地分道扬镳. According to Moore’s Law, the power of microprocessors can be rapidly increased exponentially and data storage capabilities have increased in similar ways, so it has become the key point to further improve lithography. "Advanced lithography has allowed the device’s features For example, the coherence effect can be used in a 50nm mode with ultra-violet light characteristics.1 However, in the interest of continued improvement in cost and effectiveness, the possibility of Small, so Moore’s law and lithography will inevitably parted ways.