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用椭偏光谱法测量了 ( 35ke V,1 .0× 1 0 18cm- 2 )和 ( 65ke V,1 .0× 1 0 18cm- 2 ) C+ 注入 Si形成的 Si C/Si异质结构 .应用多层介质膜模型和有效介质近似 ,分析了这些样品的 Si C/Si异质结构的各层厚度及主要成份 .研究结果表明 :注 35ke V C+ 的样品在经 1 2 0 0℃、2 h退火后形成的 Si C/Si异质结构 ,其β- Si C埋层上存在一粗糙表面层 ,粗糙表面层主要由β- Si C、非晶 Si和 Si O2 组成 ,而且 β- Si C埋层与体硅界面不同于粗糙表面层与 β- Si C埋层界面 ;注 65ke V C+的样品在经1 2 50℃、1 0 h退火后形成的 Si C/Si异质结构 ,其表层 Si是较完整的单晶 Si,埋层β- Si C分成三层微结构 ,表层 Si与β- Si C埋层界面和β- Si C埋层与体硅界面亦不相同 .这些结果与 X射线光电子谱 ( XPS)和横截面透射电子显微镜 ( TEM)的分析结果一致
The Si C / Si heterostructures formed by Si implantation at (35 keV, 1.0 × 10 18 cm -2) and (65 keV, 1 × 10 18 cm-2) C + were measured by ellipsometry. Multilayer dielectric film model and the effective medium approximation, the Si C / Si heterostructures of these samples were analyzed the thickness and the main components of the results show that: Note 35ke V C + samples at 1200 ℃, 2 h The Si C / Si heterostructures formed after annealing have a rough surface layer on the β-Si C buried layer, the rough surface layer mainly consists of β-Si C, amorphous Si and Si O2, and the buried layer of β-Si C The interface of bulk silicon and bulk silicon is different from the interface of rough surface layer and β-Si C buried layer. The Si C / Si heterostructures formed after annealed at 120 ℃ and 10 h for 65ke V C + Is a more complete single crystal Si, the buried layer β-Si C is divided into three layers of microstructure, the surface layer of Si and β-Si C buried layer interface and β-Si C buried layer and bulk silicon interface is also different These results and X-ray The results of photoelectron spectroscopy (XPS) and cross-sectional transmission electron microscopy (TEM) were consistent