来自IBM和佐治亚技术学院的一个研究小组展示了运行频率超过500GHz的异质结S i G e(硅锗)双极晶体管。该研究小组表示,尽管这一结果是用液态氦将晶体管冷却到4.5K(-451°F)获得的,但同样的器件在室温条件下可工作于350GHz,而且晶体管若经优化可接近太赫的室温速率。I B M在200m A team from IBM and the Georgia Institute of Technology demonstrated heterojunction S i G e (silicon germanium) bipolar transistors operating at frequencies in excess of 500 GHz. The team said that although this result was obtained by cooling the transistor to 4.5 K (-451 ° F) with liquid helium, the same device can operate at 350 GHz at room temperature and the transistor can be optimized for access to terahertz Room temperature rate. I B M at 200m