论文部分内容阅读
设计了一种采用Ga As p HEMT管芯的小型化宽带超低噪声放大器,利用ADS微波仿真软件进行原理图设计、优化。其中管芯采用单电源加电,避免了双电源输入端隔直电容对噪声的引入;另外,电路结构采用电阻负反馈拓展了带宽,同时也增加了电路的稳定性,实现较好的输入输出匹配特性。设计的低噪放在7GHz—10GHz频率范围内噪声系数小于0.7d B,增益大于30d B,输入输出回波损耗小于-10d B。低噪声放大器的尺寸仅为23mm×18mm×10mm。
A miniaturized broadband ultra-low noise amplifier with Ga As p HEMT die is designed. The schematic design and optimization are carried out by using ADS microwave simulation software. The die adopts a single power supply to prevent the introduction of noise due to the blocking capacitance of the dual power input end. In addition, the circuit structure adopts a negative feedback of resistance to expand the bandwidth, and also increases the stability of the circuit to achieve better input and output Matching characteristics. Designed for low noise in the 7GHz-10GHz frequency range noise figure less than 0.7d B, gain greater than 30d B, the input and output return loss less than -10d B. The size of the LNA is only 23mm × 18mm × 10mm.