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利用外延片焊接技术,把Si(111)衬底上生长的GaN蓝光LED外延材料压焊到新的Si衬底上.在去除原Si衬底和外延材料中缓冲层后,制备了垂直结构GaN蓝光LED.与外延材料未转移的同侧结构相比,转移后的垂直结构GaN蓝光LED的电学性能、发光性能和结构性能明显改善,光输出功率显著提高.垂直结构LED的GaN层受到的张应力比同侧结构LED小.
A GaN blue LED epitaxial material grown on a Si (111) substrate was press-bonded to a new Si substrate by epitaxial wafer soldering.After removing the buffer layer of the original Si substrate and the epitaxial material, a vertical structure GaN Compared with the same-side structure with no transfer of epitaxial material, the blue light-emitting diode (GaN) LED with vertical structure has significantly improved the electrical, luminescent and structural properties and the light output power significantly increased. The stress is smaller than the ipsilateral structure LED.