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Si/SiGe P-channel Metal-Oxide-Semiconductor Field Effect Transistor (PMOSFET) using P+ (phosphor ion) implantation technology is successfully fabricated. P+ implantation into SiGe virtual substrate induces a narrow defect region slightly below the SiGe/Si interface,which gives rise to strongly enhanced strain relaxation of SiGe virtual substrate. X-Ray Diffraction (XRD) tests show that the degree of relaxation of SiGe layer is 96% while 85% before implantation. After annealed,the sample appeared free of Threading Dislocation densities (TDs) within the SiGe layer to the limit of Trans-mission Electron Microscopy (TEM) analysis. Atomic Force Microscope (AFM) test of strained Si channel surface shows that Root Mean Square (RMS) is 1.1nm. The Direct Current (DC) characters measured by HP 4155B indicate that the maximum saturated transconductance is twice bigger than that of bulk Si PMOSFET.
Si + SiGe P-channel Metal-Oxide-Semiconductor Field Effect Transistor (PMOSFET) using P + (phosphor ion) implantation technology is successfully fabricated. P + implantation into SiGe virtual substrate induces a narrow defect region slightly below the SiGe / Si interface, which gives X-Ray Diffraction (XRD) tests show that the degree of relaxation of SiGe layer is 96% while 85% before implantation. After annealed, the sample has been free of Threading Dislocation densities (TDs Atomic Force Microscope (AFM) test of strained Si channel surface shows that Root Mean Square (RMS) is 1.1 nm. The Direct Current (DC) characters within the SiGe layer to the limit of Trans-mission Electron Microscopy measured by HP 4155B indicate that the maximum saturated transconductance is twice bigger than that of bulk Si PMOSFET.