概述了目前半导体材料研究最有代表性的超薄层微结构材料的新进展。由于MBE、MOCVD和CBE等先进材料生长设备的创立和完善,大大促进了超薄层微结构材料的迅速发展,使微电子和光电子器件的设计从“杂质工程”发展到“能带工程”。主要介绍了国际上从晶格匹配材料体系到晶格失配的应变异质结构材料体系的研究成果及研究动向;简述了我国的超薄层微结构材料研究现状,并提出了一些意见。 The recent advances in the most representative ultrathin layer microstructural materials for semiconductor materials research are summarized. Due to the establishment and improvement of advanced material growing equipment such as MBE, MOCVD and CBE, the rapid development of ultra-thin layer microstructural materials has been greatly promoted, and the design of microelectronic and optoelectronic devices has been developed from “impurity engineering” to “energy banding engineering”. The research results and research trends of the international system of strained heterostructural materials from lattice-matched material systems to lattice mismatch are introduced. The research status of ultra-thin layer microstructural materials in China is briefly introduced and some suggestions are put forward.