据《Semiconductor Manufacturing》2009年第11期报道,英特尔公司22nm技术现在处于全速发展阶段,研发的22nm测试电路包括用于22nm微处理器的SRAM存储器和逻辑电路。测试芯片在1cm2面积上集成29亿个晶体管,密度大约是32nm芯片的两部。英特尔22nm制程技术研究动态@孙再吉 According to “Semiconductor Manufacturing” 2009 No. 11 reported that Intel’s 22nm technology is now in full speed development stage, 22nm test circuit developed by 22nm microprocessor for the SRAM memory and logic circuits. The test chip integrates 2.9 billion transistors in a 1 cm2 area and has a density of about two 32-nm chips. Intel 22nm Process Technology Research @ Sun Zaiji