用改进的液相外延方法 L PE 生长了无铝的 In Ga As P/Ga As分别限制单量子阱半导体激光器 ,测量其远场分布近似为高斯分布 .用缓变波导理论分析了产生这种分布所对应的光波导结构的折射率分布模型 ,并简单解释了其生成原因 ,为改善光束质量提供了参考 A modified single-quantum well semiconductor laser was grown by an improved liquid-phase epitaxy (LEP) method, using an as-grown In GaAsP / GaAs single-quantum well semiconductor laser. The far-field distribution was measured as Gaussian distribution. Corresponding to the optical waveguide structure of the refractive index distribution model, and simply explain the reasons for the formation, to improve the beam quality provides a reference