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介绍了用于钨双嵌入和钨栓CMP工艺的新型CMP3200TM氧化铝浆料,测试证明,这种浆料在110nm技术节点的钨CMP工艺应用中取得了理想的效果。通过对氧化铝粒子制造工艺的有效控制,获得了可满足110nm技术节点双嵌入和栓层钨CMP工艺要求的低缺陷率,高性价比的氧化铝蛐硝酸铁浆料。从而在价格竞争激烈的半导体制造领域,特别是代工市场引起了业界越来越多的关注。
The new CMP3200 (TM) alumina slurry for tungsten double embedding and tungsten plug CMP processes is presented and tested to demonstrate that this slurry achieves the desired results for the tungsten CMP process at the 110 nm node. Through effective control of the manufacturing process of alumina particles, a low defect rate and high cost-performance alumina ferric nitrate slurry which meets the requirements of the 110 nm technology node double embedding and plugs tungsten CMP process was obtained. Thus in the price-competitive semiconductor manufacturing, especially the OEM market has aroused more and more attention in the industry.