用用性气体（Ne＋、Xe＋）离子束辅助沉积（IBAD）技术，合成了金红石型氧化钛薄膜在薄膜生长过程中，离子束以45°角轰击薄膜．通过增加离子原子到达比γ，实现了金红石型氧化钛薄膜从（110）择优取向向（100）择优取向的转变研究了取向转变的机制，择优取向的转变是表面能和沟道效应竞争的结果估算了晶面的表面能，发现（110）面具有最小的表面能当γ较小时，表面能控制薄膜的取向，此时薄膜表现为具有最小表面能的晶面（110）择优生长；随着γ的增加，对离子束具有较宽沟道的晶面（200）择优生长 The rutile titanium oxide thin films were synthesized by the gas-assisted (Ne +, Xe +) ion beam assisted deposition (IBAD) technique. During the thin film growth, the ion beam bombarded the thin film at an angle of 45 °. The transition from (110) preferred orientation to (100) preferred orientation was achieved by increasing the ion-atom arrival ratio γ. The transition of the preferred orientation was the result of the competition of surface energy and channel effect The surface energy of the crystal plane is estimated and the (110) plane has the smallest surface energy. When γ is smaller, the surface energy can control the orientation of the film, at which point the film behaves preferentially as the crystal plane (110) with the smallest surface energy; The increase of γ preferentially grows the crystal plane (200) which has a wide channel in the ion beam