众所周知,晶体三极管成品率由许多因素决定,如外延层的质量,杂质沾污,光刻质量等。本文主要讨论外延材料的缺陷对晶体三极管的影响,以及通过磷的高温快扩散提高制作晶体三极管成品率的机理和实验结果。一、外延层缺陷对晶体三极管成品率的影响实验证明,外延层的缺陷严重地影响着三极管的成品率,而在外延层缺陷中,位错 As we all know, transistor yield depends on many factors, such as the quality of the epitaxial layer, impurity contamination, lithography quality. This article mainly discusses the influence of the defects of the epitaxial material on the transistor, as well as the mechanism and experimental results of improving the yield of the crystal transistor through the rapid diffusion of phosphorus at high temperature. First, the impact of epitaxial layer defects on the yield of the transistor It was experimentally proved that the defects of the epitaxial layer seriously affect the yield of the transistor, and in the epitaxial layer defects, dislocations