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由一个128元锑化铟光二极管线列,配上两块Si-MOSFET(硅-金属氧化物半导体场效应晶体管)多路传输集成芯片,组成的焦平面组件已被研制出来。由于采用了尺寸仅为60μm的锑化铟像元,列阵总长减小到7.68mm。每块硅多路传输器芯片上包括一个动态移位寄存器,FET(场效应晶体管)选择开关,FET像元复位开关和第一级FET前置放大器。除了通过选择开关连到锑化铟光电二极管上的视频线电路外,为补偿共模噪声,一套仿真视频线电路也连到同一块硅芯片上。硅芯片尺寸为9.4×3.2mm~2。两块硅多路传输器芯片集成到与128元硅光电二极管组成的同一焦平面上,就可以分别从光电二极管的奇数元或偶数元读出光电信号。同一简单电路结构,在TV兼容下运行,对300K目标可测得辐射度分辨率(NEΔT)为0.04K。
By a 128 yuan indium antimonide light-emitting diode line, coupled with two Si-MOSFET (Silicon - Metal Oxide Semiconductor Field Effect Transistor) multiplexer integrated chip, the composition of the focal plane assembly has been developed. The total length of the array is reduced to 7.68 mm due to the use of indium antimonide cells of only 60 μm. Each silicon multiplexer chip includes a dynamic shift register, FET (Field Effect Transistor) selection switch, FET pixel reset switch and the first stage FET preamplifier. In addition to the video line circuitry connected to the indium antimonide photodiode via the select switch, a set of analog video line circuitry is also connected to the same silicon chip to compensate for common mode noise. Silicon chip size is 9.4 × 3.2mm ~ 2. The integration of two silicon multiplexer chips into the same focal plane with a 128-element silicon photodiode allows the readout of optical signals from the odd or even numbered elements of the photodiode, respectively. The same simple circuit architecture, compatible with TV operation, achieves a target resolution of radiation (NEΔT) of 0.04K for a 300K target.