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在RTP半导体器件制造设备中；为控制硅片温度的均匀性和重复性，采用了一种实时多变的策略。它基于工艺的物理模型，采用实验设计程序来估算模型参数。轴心对称加热区域中多区阵列灯的功率采用内部模型控制法则（IMC）的设计方法来进行自动计算以获得硅片的温度均久性。通过硅片上多点的高温测定法进行温度探测提供实时反馈信息，从而进行控制。为获得温度控制的技术要求，除了IMC外还使用了好几种模块，包括模型规划及防过冲等。该控制策略最早是由斯坦福大学为样机设备而研制的，后来TI公司将其使用在MMST工程中，在八台RTP反应器中处理2种亚微米CMOS工艺的十三种不同的热处理，从而根据定制化，集成化及性能来分析整个控制策略。
In RTP semiconductor device manufacturing equipment; To control the uniformity and repeatability of the silicon temperature, a real-time changeable strategy is adopted. It is based on the physical model of the process and uses experimental design procedures to estimate the model parameters. The power of the multi-zone array lamp in the axisymmetric heating area is automatically calculated using the internal model control law (IMC) design method to obtain the temperature uniformity of the silicon wafer. Temperature control by multi-point pyrometry on silicon provides real-time feedback for control. In order to obtain the technical requirements for temperature control, several modules besides IMC are used, including model planning and anti-overshooting. The control strategy was first developed by Stanford as a prototype device and later TI was used in the MMST project to process thirteen different heat treatments of two submicron CMOS processes in eight RTP reactors, Customization, integration and performance to analyze the entire control strategy.