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由于导电沟道-源/漏电极界面处可能发生的载流子带间隧穿,传统类金属氧化物半导体(MOS)碳纳米管场效应管呈现双极性传输特性,极大影响了器件性能的提高及其在电路中的应用.为获得具有理想单极性传输特性的类MOS碳纳米管场效应管,本文提出了一种基于双栅材料的器件设计方法.模拟结果表明,通过合理选取调节电极材料,在不影响器件亚阈值斜率的同时,该设计方法不仅能使开关电流比增大6—9个数量级,有效调节阈值范围,而且能有效消除传统类MOS碳纳米管场效应管的双极性传输特性.进一步研究表明,该设计所获得的器件性能提高与调节电极材料的选取密切相关,同时量子电容对其亚阈值斜率、传输极性也有一定影响.
Due to the inter-carrier tunneling that may occur at the conductive channel-source / drain electrode interface, conventional MOSFETs exhibit bipolar transmission characteristics and greatly affect device performance In order to obtain a kind of MOS transistor with ideal unipolar transmission characteristics, a device design method based on double-gate material is proposed in this paper.The simulation results show that by choosing reasonable Adjusting the electrode material can not only reduce the sub-threshold slope of the device, but also increase the switching current ratio by 6-9 orders of magnitude and effectively adjust the threshold range, and can effectively eliminate the traditional MOS-like carbon nanotube field effect transistor Bipolar transmission characteristics.Further research shows that the device obtained by the design to improve performance and adjust the electrode material selection is closely related to the quantum capacitance of its subthreshold slope, transmission polarity also have an impact.