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读出电路的注入效率是决定紫外焦平面探测器性能的重要因素。基于Ga N基p-i-n结构日盲紫外探测器以及CTIA结构读出电路的等效模型,对探测器信号读出的电荷注入效率进行了分析,得到了注入效率的表达式。分析了注入效率与积分时间、探测器等效电阻、探测器等效结电容、CTIA电路中运算放大器增益的依赖关系,并指出了放大器增益是有效影响注入效率的重要可控因素之一,可以用提高增益的方法获得更大的注入效率。设计了几种不同增益的运算放大器电路,并分别构成CTIA结构读出电路。采用GF 0.35μm 2P4M标准CMOS工艺设计电路版图并进行流片。将紫外探测器分别连接至具有不同放大器增益的CTIA读出电路并进行测试,通过对比注入效率的理论分析结果与实际测试结果,可以得知,注入效率的理论分析与实验结果吻合较好。
The injection efficiency of the readout circuit is an important factor that determines the performance of the UV focal plane detector. Based on the Ga N-based p-i-n solar-blind UV detector and CTIA read-out circuit equivalent model, the charge injection efficiency of the detector signal was analyzed, and the expression of injection efficiency was obtained. The dependency of the injection efficiency on the integration time, the equivalent resistance of the detector, the equivalent junction capacitance of the detector and the gain of the op amp in the CTIA circuit is analyzed. It is pointed out that the gain of the amplifier is one of the important controllable factors that can effectively influence the injection efficiency. Gain greater injection efficiency with increased gain. Several different gain operational amplifier circuits are designed, and constitute a CTIA structure readout circuit. GF 0.35μm 2P4M standard CMOS process design circuit layout and flow sheet. The UV detectors were connected to CTIA readout circuits with different amplifier gains respectively. The theoretical analysis of injection efficiency and the experimental results were in good agreement with the theoretical analysis and actual test results of injection efficiency.