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采用全封闭磁场的非平衡态磁控溅射系统,以纯金属为靶材,制备了AlN/WAlN(多层)/W薄膜。X射线掠射(GID)、扫描电镜(SEM)以及分光光度计等测试手段分析薄膜的相结构、表面形貌以及吸收光谱等特性。结果表明,薄膜沉积设备性能稳定,W、Al靶材溅射率高。获得AlN/WAlN(多层)/W薄膜中各层薄膜表面质地都较均匀,且为多晶态或纳米晶薄膜。该结构膜系对波长在200～2000nm范围内的光波有较高的吸收效果,平均吸收率可达96%以上,吸收性能优异。
AlN / WAlN / W thin films were prepared by using non-equilibrium magnetron sputtering system with fully enclosed magnetic field with pure metal as the target. X-ray grazing (GID), scanning electron microscopy (SEM) and spectrophotometer and other test methods to analyze the phase structure of the film, the surface morphology and absorption spectra and other characteristics. The results show that the performance of thin film deposition equipment is stable, and the sputtering rate of W and Al targets is high. The obtained AlN / WAlN (multilayer) / W films have a uniform texture on the surface of the films and are polycrystalline or nanocrystalline films. The structure film has a high absorption effect on the light wave with the wavelength in the range of 200-2000 nm, the average absorption rate can reach more than 96%, and the absorption performance is excellent.