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本文描述在Hg_(1-x)Cd_xTe上形成自身硫化物薄膜的一种新的阳极硫化法。这种新方法是利用自身硫化物薄膜而不是自身氧化物薄膜连接晶格和钝化表面。俄歇电子光谱学分析的结果表明,自身形成的均匀CdS薄膜具有突变的界面转换。金属—绝缘体—半导体器件的电容—电压特性的测量表明,薄膜具有低和负的固定表面电荷密度,约为-1×10~(11)电子·厘米~(-2),还有较低浓度的快表面电荷密度。自身硫化物薄膜使p型Hg_(1-x)Cd_xTe表面差不多处于平带,这一点优于使p型材料表面反型的自身氧化物薄膜。这种新的表面钝化法特别适用于用p型Hg_(1-x)Cd_xTe制备的光伏二极管。
This article describes a new anodic vulcanization method for forming a self-sulfide film on Hg_ (1-x) Cd_xTe. This new approach uses a self-sulfide film instead of a self-oxide film to attach the lattice and passivate the surface. The results of Auger electron spectroscopy analysis show that the uniform CdS film formed by itself has abrupt interface transformation. Measurement of the capacitance-voltage characteristics of the metal-insulator-semiconductor device shows that the films have low and negative fixed surface charge densities of about -1 × 10 11 electrons cm -2, and lower concentration Fast surface charge density. The self-sulfide film makes the p-type Hg_ (1-x) Cd_xTe surface almost flat, which is better than that of the self-oxide film which makes the p-type material surface inversion. This new surface passivation method is particularly suitable for use with p-type Hg_ (1-x) Cd_xTe PV diodes.