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从M2因子、远场发散角、近场及远场光强分布等方面对大功率底发射半导体激光器光束质量进行研究,分析了不同器件参数对光束质量的影响,为寻找有效改善光束质量的方法提供了依据。设计了一种具有新型排列方式的垂直腔面发射半导体激光(VCSEL)阵列。通过调制阵列中各单元直径以及单元间距,在4 A的工作电流下得到1 kW/cm2的高功率密度和高斯远场分布。与具有相同出光面积的单管器件和4×4二维阵列比较,新型阵列的光谱特性及光束质量均具有优越性。
From the M2 factor, far-field divergence angle, near-field and far-field light intensity distribution, the beam quality of high power bottom emitting semiconductor laser is studied. The influence of different device parameters on the beam quality is analyzed. In order to find a way to effectively improve the beam quality, Provided the basis. A vertical cavity surface emitting semiconductor laser (VCSEL) array with a novel arrangement is designed. By modulating the cell diameter and cell pitch in the array, a high power density and Gaussian far-field distribution of 1 kW / cm2 was achieved at a 4 A operating current. Compared with single-tube devices and 4 × 4 two-dimensional arrays with the same light output area, the new array has superior spectral characteristics and beam quality.