论文部分内容阅读
研究了以氧化亚铜为基，添加以金属铜作为导电组元的金属陶瓷的制备工艺．随着压制压力的增加和烧结时间的延长，所制备材料的密度呈规律性地递增．合理的工艺参数为P≥300MPa，t=10h至20h．烧结粉末体中含w（Cu）达30％时，其密实化过程及动力学曲线与粉末材料的已知规律拟合得非常好．
The preparation of cermets based on cuprous oxide with copper as the conductive component was studied. As the pressing pressure increases and the sintering time prolongs, the density of the prepared material increases regularly. Reasonable process parameters for P ≥ 300MPa, t = 10h to 20h. Sintering powder containing w (Cu) up to 30%, the densification process and kinetic curves and powder material known law fitted very well.