为提高射频溅射成膜率,本文报道了一种配置于磁控溅射装置的射频(RF)增磁装置。基于此装置的实验结果表明,在不对原有装置作任何改动的情况下,在完全相同的溅射参数下,采用此装置可使射频溅射成膜率增大为原来的4倍左右。进而,该装置提供了一种能有效地节省溅射制备时间,改善薄膜结构的简便易行的新型手段。 In order to improve the RF sputtering rate, a radio frequency (RF) magnetizer with magnetron sputtering device is reported in this paper. The experimental results based on this device show that the RF sputtering film deposition rate can be increased by about 4 times with the same sputter parameters without any modification to the original device. Furthermore, the device provides a new and simple method which can effectively save the sputtering preparation time and improve the film structure.