在高速随机存取存贮器中采用的双极型动态存贮单元由一对交叉耦合的晶体管和两个二极管组成。信息系利用双稳的电荷分布动态地存贮,并在一千赫的频率下,用一“选择”操作将其刷新。每个存贮单元的待机功率在毫微瓦范围内。每个存贮单元仅需三条互连线,且可用标准双极工艺制作在一个12平方密耳的硅片上。单元的循环时间受译码、驱动以及读出电路速度的限制,对于完整的译码电路在同一片上的512位随机存取存贮单元,估计其循环时间为50毫微秒。 Bipolar dynamic memory cells used in high-speed random access memories consist of a pair of cross-coupled transistors and two diodes. The information is dynamically stored using a bistable charge distribution and is refreshed with a “select” operation at a frequency of one kilohertz. The standby power of each memory cell is in the nanowatt range. Only three interconnects per memory cell are required and can be fabricated on a 12 square mil silicon wafer using the standard bipolar process. The cycle time of the cell is limited by the speed of decoding, driving and readout circuits. For the 512-bit random access memory cells on the same chip of the complete decoding circuit, the cycle time is estimated to be 50 nanoseconds.