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讨论了深亚微米半导体器件模拟的ＭｏｎｔｅＣａｒｌｏ方法（ＭＣＭ），并简要阐述了玻耳兹曼模型（ＢＴＭ）、漂移扩散模型（ＤＤＭ）和流体动力学模型（ＨＤＭ）之间的关系．
The Monte Carlo method (MCM) for simulating deep submicron semiconductor devices is discussed, and the relationship between Boltzmann model (BTM), drift diffusion model (DDM) and fluid dynamics model (HDM) is briefly described.