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本文给出一种频带覆盖达到100:1的微波FET 超宽带放大器的理论和设计方法。从微波FET 的小信号简化模型出发,在满足最大增益带宽积的条件下,以电压传输系数函数对级间网络进行网络综合,再以优化方法对电路参量进行调整,从而使放大器在超宽带范围内获得平坦的增益响应和小的输入输出驻波比特性,本文所提出的理论和设计方法已由实验结果所验证。
This paper presents a theoretical and design method for a microwave FET ultra-wideband amplifier with 100: 1 coverage. Based on the simplified model of microwave FET with small signal, under the condition that the maximum gain-bandwidth product is satisfied, the network synthesis of the interstage network is performed by the voltage transfer coefficient function, and then the circuit parameters are optimized by the optimization method, so that the amplifier can operate in the ultra-wideband range The flattened gain response and small input-output VSWR characteristics are obtained in this paper. The theoretical and design methods proposed in this paper have been verified by the experimental results.