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本文综述了有关新型的GaAs／AlGaAs体系双色量子阱红外探测器的结构特性和光电特性的研究工作．双色探测器工作在3～5μm及8～12μm大气窗口波段范围，是光伏响应模式和光导响应模式相结合的偏压控制型两端器件．研究内容包括探测器的器件结构特性、红外光吸收特性、红外光电流响应、暗电流、噪声特性和探测率测试分析等等．首次从理论和实验两方面探讨有关量子阱束缚子能带到扩展态中不同虚能组之间的光跃迁问题及光电子输运问题．
This review summarizes the structural and optoelectronic properties of a novel GaAs / AlGaAs system two-color quantum-well infrared detector. The two-color detector operates in the 3 to 5 μm and 8 to 12 μm atmospheric window bands and is a biased voltage-controlled two-terminal device that combines a photovoltaic response mode with a photoconductive response mode. The research includes the structural characteristics of the detector device, infrared absorption characteristics, infrared photocurrent response, dark current, noise characteristics and detection rate test analysis and so on. For the first time, we discuss theoretically and experimentally the light transition problem and the photoelectron transport problem between the energy bands of the quantum well tethers and the different virtual energy groups in the extended state.